Solution Processing for High-Efficiency CuIn(S,Se)â Solar Cells
August 12, 2025
Solar energy's next big leap isn't happening in sprawling vacuum chambers or billion-dollar fabrication plants. It's brewing in labs where scientists are crafting high-performance solar cells using techniques reminiscent of inkjet printing.
Welcome to the world of solution-processed CuIn(S,Se)â (CISSe) solar cells â a technology promising to deliver efficient, affordable, and flexible solar power.
Traditional methods for making top-tier solar cells like silicon or vacuum-deposited Cu(In,Ga)Seâ (CIGS) involve high temperatures, complex equipment, and significant material waste. Solution processing flips this script. Imagine dissolving metal salts in specially formulated solvents and then depositing the solar absorber layer like paint or ink onto surfaces â even flexible ones.
For CISSe â a material prized for its near-perfect bandgap (~1.0 eV) for absorbing infrared light â solution processing is particularly promising. It enables precise control over composition and microstructure, critical for high efficiency. Recent breakthroughs have pushed solution-processed CISSe efficiencies past 16.5% for single junctions and over 20% in tandem configurations, rivaling vacuum methods 2 3 6 .
Solution-processed CISSe efficiency milestones over time
CISSe belongs to the chalcopyrite family of semiconductors. Its magic lies in its tunable bandgap. By adjusting sulfur-selenium ratios, scientists can target ~1.0 eV â the ideal bandgap for the bottom cell in tandem solar stacks (e.g., paired with perovskite top cells). This allows efficient harvesting of low-energy infrared light missed by conventional cells 3 5 .
Unlike vacuum deposition, solution processing involves:
Early solution-processed CISSe cells suffered from:
Recent innovations target these issues through doping, composition grading, and selenization engineering 2 6 .
Solution processing of solar cells in a research lab setting
A 2024 study published in Nature Communications (Vol. 15, Art. 10365) achieved a record 20.26% efficiency in a narrow-bandgap CIGS cell â a landmark for solution-compatible processing 3 . This experiment showcased how nanoscale control over elemental distribution could overcome voltage limitations in CISSe.
The team crafted a CISSe absorber with a meticulously engineered "U-shaped" gallium (Ga) profile:
Parameter | Value | Significance |
---|---|---|
Efficiency (PCE) | 20.26% | Certified record for narrow-bandgap CIGS |
Open-Circuit Voltage (Voc) | 642 mV | 30 mV gain from front grading |
Bandgap Minimum | 1.01 eV | Optimal for IR absorption in tandems |
Voltage Deficit | 368 mV | Lowest reported for CISSe-type cells |
Creating champion solution-processed CISSe cells relies on specialized reagents and materials. Here's what's in the virtual lab cart:
Material/Reagent | Role in Solution Processing | Impact on Performance |
---|---|---|
Amine-Thiol Solvents (e.g., Ethylenediamine + 1,2-Ethanedithiol) | Dissolve Cu/In/Ga salts without toxic hydrazine | Enables stable, eco-friendly precursor inks 1 |
Ag-Se Co-selenization Source (Ag powder + Se powder) | Forms low-melting AgâSe liquid phase during annealing | Accelerates Se uptake & grain growth; boosts efficiency to 16.48% 6 |
Cu-Gradient Precursors (Layered Cu-deficient solutions) | Controls Cu distribution before selenization | Prevents secondary phases; enables 13.35% efficiency without KCN etching 2 |
D-Homoserine Lactone Hydrochloride (D-HLH) | Additive for perovskite top cells in tandems | Improves perovskite coverage on rough CISSe; passivates defects |
2-Thiopheneethylammonium Iodide (2-TEAI) | Surface passivator for perovskite | Suppresses interface recombination in tandems |
CZTS (CuâZnSnSâ) Hole Transport Layer | Replaces Mo at back contact | Enhances hole extraction; simulated >27% efficiency in CMTS cells 7 |
Precursor Formation:
CuCl + InClâ + 2(Se) + 4(EDT) â CuIn(SEdt)â + 4HCl
Selenization:
CuIn(SEdt)â + Se(vapor) â CuInSeâ + 4EDTâ
Solution-processed CISSe is rapidly evolving beyond single junctions:
CISSe's infrared harvesting pairs perfectly with perovskite's visible light capture. Solution methods enable monolithic stacking. Recent work hit 24.6% efficiency using novel crystallization control and interface passivation .
Deposited on bendable ultra-thin glass (<200 µm), CISSe achieves minority carrier lifetimes nearing 100 ns â rivaling rigid cells. This unlocks applications in vehicle-integrated PV and portable electronics 4 .
Cell Type | Processing Method | Efficiency | Key Advantage |
---|---|---|---|
CISSe (Single Junction) | Ag-Se Co-selenization | 16.48% | Highest for non-hydrazine solutions 6 |
CIGS (Single Junction) | Cu-Gradient Solution | 13.35% | No toxic etching required 2 |
CIGS (Single Junction) | Vacuum (Co-evaporation) | 23.64% | Current lab record (rigid) 5 |
Perovskite/CISSe (Tandem) | Solution + Sputtering | 24.6% | All-thin-film tandem record |
Flexible solar cell applications in building integration
Solution processing has transformed CISSe solar cells from lab curiosities into serious contenders for the next generation of photovoltaics. By mastering ink chemistry, nanoscale grading, and defect control, researchers are closing the efficiency gap with vacuum techniques while unlocking unprecedented cost and form-factor advantages. As tandem architectures mature and flexible modules roll toward commercialization, these "solar inks" may soon power everything from smart windows to electric vehicles â proving that high efficiency doesn't have to come at a high cost. The future of solar isn't just bright; it's printable, bendable, and incredibly versatile.