How Novel Sources Are Revolutionizing Selective Epitaxy of Compound Semiconductors
Imagine being able to orchestrate the growth of materials one atomic layer at a time, creating intricate structures with perfect precision. This isn't science fiction—it's the remarkable reality of selective epitaxy, an advanced manufacturing technique that's quietly powering the technological revolution in everything from smartphones to electric vehicles.
As the global semiconductor epitaxy wafer market continues its rapid expansion—projected to grow with a CAGR of 6.3% from 2025 to 2031 1 —the development of innovative precursor sources becomes increasingly crucial for meeting the demands of next-generation technologies.
At the heart of this process are novel precursor sources—specialized chemical compounds that serve as the building blocks for creating tomorrow's semiconductors. These sophisticated materials enable engineers to construct microscopic landscapes with astonishing accuracy, pushing the boundaries of what's possible in electronics, photonics, and quantum computing.
A specialized semiconductor manufacturing process that enables precise deposition of crystalline materials only on specific patterned areas of a substrate, while leaving other regions untouched .
Materials made from two or more elements that offer superior properties for specific applications, including gallium nitride (GaN), silicon carbide (SiC), and gallium arsenide (GaAs) 2 .
Chemical compounds that provide essential elements for epitaxial growth, with recent advances focusing on:
The compound semiconductor device industry is on a rapid growth trajectory, with projections indicating it will reach $25 billion by 2030 2 .
Researchers have developed a new generation of metalorganic precursors with tailored chemical properties that enable more precise control over the epitaxial process. For instance, new gallium and indium precursors with modified organic ligands have demonstrated improved selectivity in the deposition of III-V semiconductors on patterned silicon substrates 3 .
Another major advancement has been in heteroepitaxy—the epitaxial growth of a crystalline film on a substrate of dissimilar material. This approach is increasingly important for combining materials with different properties to optimize device performance 1 .
| Characteristic | Traditional Precursors | Novel Precursors |
|---|---|---|
| Decomposition Temperature | High (>500°C) | Tunable (300-600°C) |
| Selectivity | Moderate | High |
| Impurity Incorporation | Higher carbon/oxygen | Minimal impurities |
| Process Window | Narrow | Wider |
| Applications | Standard structures | Advanced heterostructures |
A landmark study recently presented at the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) demonstrated the selective area growth of gallium nitride (GaN) nanostructures using an innovative magnesium-containing precursor that enabled unprecedented control over dopant incorporation 3 .
The research team hypothesized that a newly developed magnesium-organic compound would serve as both a growth precursor and p-type dopant source simultaneously, allowing for more uniform doping distribution compared to conventional methods.
| Parameter | Value | Significance |
|---|---|---|
| Temperature | 450°C | Optimized for selectivity |
| Pressure | 100 Torr | Balance between growth rate and quality |
| Growth Time | 90 minutes | Determines final thickness |
| V/III Ratio | 2000:1 | Affects crystal quality and morphology |
| Precursor Flow Rate | 50 sccm | Controls doping concentration |
The experimental results demonstrated remarkable advances in selective epitaxy capabilities through the use of novel precursor sources. The researchers achieved highly selective growth of GaN structures exclusively on the unmasked silicon regions, with no observable deposition on the silicon nitride mask areas.
| Parameter | Value Achieved | State-of-the-Art Comparison |
|---|---|---|
| Selectivity | >99.9% | ~98% previously |
| Defect Density | 5×10⁸ cm⁻² | Typically 10⁹-10¹⁰ cm⁻² |
| Doping Uniformity | ±3% across wafer | Typically ±15-20% |
| Hole Mobility | 32 cm²/V·s | Typically 10-20 cm²/V·s |
| Interface Roughness | 0.4 nm RMS | Typically 1-2 nm RMS |
Electric vehicles and efficient power conversion systems
High-frequency RF components for communication
MicroLED displays with higher efficiency
Precise placement of quantum dots and nanostructures
Next-generation power devices with 50% more efficient power conversion using SiC and GaN
Integrated photonics enabling 100x faster data transfer with InP, GaAs, and SiN
MicroLED displays with 10x higher efficiency using GaN and AlGaInP
Quantum computing with error-corrected quantum processors based on Ge/Si and III-V materials
The development of novel precursor sources for selective epitaxy represents a fascinating convergence of chemistry, materials science, and engineering. These advanced molecular building blocks are enabling unprecedented control over semiconductor structures, allowing researchers and manufacturers to create devices with increasingly sophisticated functionalities.
As the global semiconductor epitaxy wafer market continues its rapid growth 1 , driven by demands for more efficient electronics, advanced communications, and sustainable energy technologies, the importance of these specialized materials will only increase.
The groundbreaking experiment exploring simultaneous growth and doping using a novel magnesium precursor exemplifies the innovative approaches pushing this field forward. These advances are not merely academic—they form the foundation of tomorrow's technological landscape, enabling everything from more efficient electric vehicles to faster communication networks and more powerful computing systems.
The semiconductor epitaxy wafer market is projected to grow with a CAGR of 6.3% from 2025 to 2031 1 .
These companies are developing specialized reactors with enhanced capabilities for handling next-generation precursor materials 4 .